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| 型號： | 2N5154U3 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2N5154U3 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
T4-LDS-0039 Rev. 1 (080797)
Page 1 of 2
DEVICES
LEVELS
2N5152
2N5154
JAN
2N5152L
2N5154L
JANTX
2N5152U3
2N5154U3
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
80
Vdc
Collector-Base Voltage
VCBO
100
Vdc
Emitter-Base Voltage
VEBO
5.5
Vdc
Collector Current
IC
2.0
Adc
Total Power Dissipation
(1)
@ TA = +25°C
@ TC = +25°C
PT
1.0
10
W
Operating & Storage Junction Temperature Range
TJ , Tstg
-65 to +200
°C
Thermal Resistance, Junction-to Case
(1)
RθJC
10
1.7 (U3)
°C/W
Note:
1)
See 19500/544 for thermal derating curves.
2)
This value applies for PW ≤ 8.3ms, duty cycle ≤ 1%.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 100mAdc, IB = 0
V(BR)CEO
80
Vdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc, IC = 0
VEB = 5.5Vdc, IC = 0
IEBO
1.0
Adc
mAdc
Collector-Emitter Cutoff Current
VCE = 60Vdc, VBE = 0
VCE = 100Vdc, VBE = 0
ICES
1.0
Adc
mAdc
Collector-Emitter Cutoff Current
VCE = 40Vdc, IB = 0
ICEO
50
Adc
ON CHARACTERTICS
Forward-Current Transfer Ratio
IC = 50mAdc, VCE = 5Vdc
IC = 2.5Adc, VCE = 5Vdc
2N5152
2N5154
2N5152
2N5154
hFE
20
50
30
70
---
90
200
TO-5
2N5152L, 2N5154L
TO-39 (TO-205AD)
2N5152, 2N5154
U-3
2N5152U3, 2N5154U3
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