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參數(shù)資料
| 型號(hào)： | 2N5154U3 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2N5154U3 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
T4-LDS-0039 Rev. 1 (080797)
Page 2 of 2
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
IC = 5Adc, VCE = 5Vdc
2N5152
2N5154
hFE
20
40
Collector-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
IC = 5.0Adc, IB = 500mAdc
VCE(sat)
0.75
1.5
Vdc
Base-Emitter Voltage Non-Saturation
IC = 2.5Adc, VCE = 5Vdc
VBE
1.45
Vdc
Base-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
IC = 5.0Adc, IB = 500mAdc
VBE(sat)
1.45
2.2
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500mAdc, VCE = 5Vdc, f = 10MHz
2N5152
2N5154
|hfe|
6
7
Small-signal short Circuit Forward-Current Transfer Ratio
IC = 100mAdc, VCE = 5Vdc, f = 1KHz
2N5152
2N5154
hfe
20
50
Output Capacitance
VCB = 10Vdc, IE = 0, f = 1.0MHz
Cobo
250
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
IC = 5Adc, IB1 = 500mAdc
ton
0.5
μs
Turn-Off Time
RL = 6Ω
toff
1.5
μs
Storage Time
IB2 = -500mAdc
ts
1.4
μs
Fall Time
VBE(OFF) = 3.7Vdc
tf
0.5
μs
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, tP = 1.0s
Test 1
VCE = 5.0Vdc, IC = 2.0Adc
Test 2
VCE = 32Vdc, IC = 310mAdc
Test 3
VCE = 80Vdc, IC = 12.5mAdc
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