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    參數(shù)資料
    

    


    


    
型號：
2N5430

    

    
廠商：
CENTRAL SEMICONDUCTOR CORP

    

    
元件分類：
功率晶體管

    

    
英文描述：
Power Transistors

    

    
中文描述：
7 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66

    

    
封裝：
TO-66, 2 PIN

    

    
文件頁數(shù)：
2/2頁

    

    
文件大小：
15K

    

    
代理商：
2N5430


    

    

    

	
    
    
    

    
    
	
    BV
    CEO (sus)*
    Collector – Emitter
    Sustaining Voltage
    I
    CBO
    Collector Cutoff Current
    I
    CEX
    Collector Cutoff Current
    I
    CBO
    I
    EBO
    Collector Cutoff Current
    Emitter Cutoff Current
    100
    V
    100
    m
    A
    10
    m
    A
    1.0
    mA
    10
    m
    A
    100
    m
    A
    Min
    Max
    Unit
    OFF CHARACTERISTICS
    Parameter
    Test Conditions
    I
    C
    = 50mA , I
    B
    = 0
    V
    CE
    = 90V , I
    B
    = 0
    V
    CE
    = 90V , V
    EB(off)
    = 1.5V
    V
    CE
    = 90V , V
    EB(off)
    = 1.5V , T
    C
    = 150°C
    V
    CB
    = Rated V
    CB
    , I
    E
    = 0
    V
    BE
    = 6V , I
    C
    = 0
    hFE
    *
    DC Current Gain
    Collector – Emitter
    V
    CE(sat)*
    Saturation Voltage
    Base – Emitter
    V
    BE(sat)*
    Saturation Voltage
    60
    60
    240
    40
    0.7
    1.2
    1.2
    2.0
    ON CHARACTERISTICS
    —
    V
    V
    I
    C
    = 500mA , V
    CE
    = 2V
    I
    C
    = 2A , V
    CE
    = 2V
    I
    C
    = 5A , V
    CE
    = 2V
    I
    C
    = 2A , I
    B
    = 0.2A
    I
    C
    = 7A , I
    B
    = 0.7A
    I
    C
    = 2A , I
    B
    = 0.2A
    I
    C
    = 7A , I
    B
    = 0.7A
    Min
    Max
    Unit
    Parameter
    Test Conditions
    Current Gain
    f
    T
    Bandwidth Product
    C
    ob
    C
    ib
    Output Capacitance
    Input Capacitance
    30
    MHz
    250
    pF
    1000
    pF
    DYNAMIC CHARACTERISTICS
    Parameter
    I
    C
    = 500 mA, V
    CE
    = 10V, f = 10 MHz
    V
    CB
    = 10V, I
    E
    = 0, f = 100 kHz
    V
    BE
    = 2V, I
    C
    = 0, f = 100 kHz
    Test Conditions
    Min
    Max
    Unit
    td
    tr
    ts
    tf
    Delay Time
    V
    CC
    = 40V, V
    EB(off)
    = 3V
    I
    C
    = 2A, I
    B1
    = 200mA
    V
    CC
    = 40V, I
    C
    = 2A
    I
    B1
    = I
    B2
    = 200mA
    Rise Time
    Storage Time
    Fall Time
    100
    ns
    100
    ns
    2.0
    m
    s
    200
    ns
    SWITCHING CHARACTERISTICS
    Parameter
    Test Conditions
    Min
    Max
    Unit
    * Pulse Test: Pulse width = 300 
    m
    s, Duty Cycle = 2.0 %
    Prelim. 1/94
    2N5430
    LA B
    S E M E
    Semelab plc.
    Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
    E-mail: 
    sales@semelab.co.uk
    http://www.semelab.co.uk
    
    
    
    
    
    


    


    

    相關(guān)PDF資料
    		

    PDF描述
    		

    
    

    
2N5430
POWER TRANSISTORS(7A,40W)

    

    
2N5468
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.

    

    
2N5469
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package

    

    
2N5551C
Epitaxial Planar NPN Transistor(General Application,High Voltage Application)(外延平面NPN晶體管（通用型，高電壓應(yīng)用）)

    

    
2N5551S
Epitaxial Planar NPN Transistor(General Application,High Voltage Application)(外延平面NPN晶體管（通用型，高電壓應(yīng)用）)

    

    

    

    


    


    

    相關(guān)代理商/技術(shù)參數(shù)
    		

    參數(shù)描述
    		

    
    

    
2N5430X
 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7A I(C) | TO-213AA

    

    
2N5431
 制造商:Motorola Inc 功能描述:

    

    
2N5432
功能描述:JFET 25V 10pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel

    

    
2N5432_07
 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel JFETs

    

    
2N5432-2
 制造商:Vishay Angstrohm 功能描述:Trans JFET N-CH 3-Pin TO-206AC T/R 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 3PIN TO-52 - Bulk

    

    
    
    
    
	
    	
    
    
     
     
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