參數(shù)資料
型號(hào): 2N5434
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel JFET(最大導(dǎo)通電阻10Ω的N溝道結(jié)型場(chǎng)效應(yīng)管)
中文描述: N溝道場(chǎng)效應(yīng)(最大導(dǎo)通電阻10Ω的?溝道結(jié)型場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 3/5頁(yè)
文件大小: 62K
代理商: 2N5434
2N5432/5433/5434
Siliconix
S-52424—Rev. E, 14-Apr-97
3
Typical Characteristics
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
20
0
–8
–10
–4
8
4
0
1000
800
400
200
0
16
12
600
–2
–6
I
D
V
GS(off)
– Gate-Source Cutoff Voltage (V)
r
DS
@ I
D
= 10 mA, V
GS
= 0 V
I
DSS
@ V
DS
= 15 V, V
GS
= 0 V
I
DSS
r
DS
200
0
160
80
40
0
–8
–10
–4
50
40
20
10
0
120
30
–2
–6
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
g
f
V
GS(off)
– Gate-Source Cutoff Voltage (V)
g
fs
and g
os
@ V
DS
= 5 V
V
GS
= 0 V, f = 1 kHz
g
fs
g
os
g
o
100
0
6
8
10
40
20
0
80
60
2
4
Output Characteristics
I
D
V
DS
– Drain-Source Voltage (V)
–0.4 V
–0.6 V
–0.8 V
–0.2 V
V
GS(off)
= –2 V
V
GS
= 0 V
100
0
0.3
0.4
0.5
40
20
0
80
60
0.1
0.2
Output Characteristics
I
D
V
DS
– Drain-Source Voltage (V)
–0.5 V
–1.0 V
–1.5 V
–0.2 V
V
GS(off)
= –4 V
V
GS
= 0 V
5
0
–6
–8
–10
4
3
2
1
0
30
0
15
20
10
5
25
24
18
12
6
0
–2
–4
Turn-On Switching
Turn-Off Switching
S
V
GS(off)
– Gate-Source Cutoff Voltage (V)
I
D
– Drain Current (mA)
t
r
approximately independent of I
D
V
DD
= 1.5 V, R
G
= 50
V
GS(L)
= –10 V
I
D
= 25 mA
I
D
= 10 mA
t
r
t
d(off)
V
GS(off)
= –2 V
t
d(off)
independent
of device V
GS(off)
V
DD
= 1.5 V, V
GS(L)
= –10 V
V
GS(off)
= –8 V
S
t
d(on)
t
f
r
D
)
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