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參數(shù)資料
| 型號(hào)： | 2N5460 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel JFET(最小柵源擊穿電壓40V，最小飽和漏極電流-1mA的P溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | P溝道場(chǎng)效應(yīng)（最小柵源擊穿電壓40V的，最小飽和漏極電流，一毫安的P溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | 2N5460 |
2N/SST5460 Series
2
Siliconix
S-52431—Rev. C, 05-May-97
Specifications
a
Limits
2N/SST5460
2N/SST5461
2N/SST5462
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= 10 A , V
DS
= 0 V
55
40
40
40
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= –15 V, I
D
= –1 A
0.75
6
1
7.5
1.8
9
Saturation Drain Current
c
I
DSS
V
DS
= –15 V, V
GS
= 0 V
–1
–5
–2
–9
–4
–16
mA
Gate Reverse Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
0.003
5
5
5
nA
T
A
= 100 C
0.0003
1
1
1
A
Gate Operating Current
I
G
V
DG
= –20 V, I
D
= –0.1 mA
3
pA
Drain Cutoff Current
I
D(off)
V
DS
= –15 V, V
GS
= 10 V
–5
I
D
= –0.1 mA
1.3
0.5
4
Gate-Source Voltage
V
GS
V
DS
= –15 V
I
D
= –0.2 mA
2.3
0.8
4.5
I
D
= –0.4 mA
3.8
1.5
6
V
Gate-Source
Forward Voltage
V
GS(F)
I
G
= –1 mA , V
DS
= 0 V
–0.7
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= –15 V, V
= 0 V
f = 1 kHz
1
4
1.5
5
2
6
mS
Common-Source
Output Conductance
g
os
GS
75
75
75
S
Common-Source
Reverse Transfer
Capacitance
C
iss
2N
4.5
7
7
7
SST
4.5
Common-Source
Reverse Transfer
Capacitance
C
rss
V
DS
= –15 V, V
GS
= 0 V
f = 1 MHz
1.2
pF
Common-Source
Output Capacitance
C
oss
2N
1.5
2
2
2
SST
1.5
Equivalent Inp
Noise Voltage
e
n
V
DS
= –15 V, V
= 0 V
f = 100 Hz
2N
15
115
115
115
nV
√
Hz
GS
SST
15
Noise Figure
NF
V
DS
= –15 V, V
GS
= 0 V
f = 100 Hz R
f = 100 Hz, R
G
= 1 M
BW = 1 Hz
2N
0.2
2.5
2.5
2.5
dB
SST
0.2
Notes
a.
b.
c.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
2%.
PSCIB
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