參數(shù)資料
型號(hào)： 2N5655
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Plastic Silicon NPN Power Transistor(塑料硅NPN功率晶體管)
中文描述： 0.5 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-225AA
封裝： PLASTIC, CASE 77-09, 3 PIN
文件頁(yè)數(shù)： 3/5頁(yè)
文件大?。?/td> 80K
代理商： 2N5655
2N5655, 2N5657
http://onsemi.com
3
1.0
20
Figure 3. ActiveRegion Safe Operating Area
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
0.5
0.2
0.1
0.01
30
40
60
100
200
300 400
600
Second Breakdown Limit
Thermal Limit @ T
C
= 25
°
C
Bonding Wire Limit
I
Curves apply below rated V
CEO
T
J
= 150
°
C
d-
c
1.0 ms
0.05
0.02
10 s
2N5655
2N5657
500 s
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150 C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
Figure 4. Current Gain
I
C
, COLLECTOR CURRENT (mA)
300
101.0
200
100
70
50
30
2.0
3.0
5.0
7.0
30
50
70
100
200
300
500
10
20
h
20
T
J
= +150
°
C
+25
°
C
55
°
C
V
CE
= 10 V
V
CE
= 2.0 V
+100
°
C
1.0
10
I
C
, COLLECTOR CURRENT (mA)
0.8
0.6
0.4
0
20
50
100
200
300
500
V
BE(sat)
@ I
C
/I
B
= 10
V
0.2
30
V
BE
@ V
CE
= 10 V
V
CE(sat)
@ I
C
/I
B
= 10
I
C
/I
B
= 5.0
T
J
= +25
°
C
Figure 5. “On” Voltages
相關(guān)PDF資料
PDF描述
2N5657 Plastic Silicon NPN Power Transistor(塑料硅NPN功率晶體管)
2N5656 Plastic Silicon NPN Power Transistor(0.5A，20W，300V（集電極-發(fā)射極），塑料硅NPN功率晶體管)
2N5659 HIGH SPEED NPN TRANSISTOR 120 VOLTS
2N5006 HIGH SPEED NPN TRANSISTOR 120 VOLTS
2N5008 HIGH SPEED NPN TRANSISTOR 120 VOLTS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5655/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Plastic NPN Silicon High-Voltage Power Transistor
2N5655_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic NPN Silicon High−Voltage Power Transistor
2N5655G 功能描述:兩極晶體管 - BJT 1A 250V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5656 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors
2N5657 功能描述:兩極晶體管 - BJT NPN Fast Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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