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參數(shù)資料
| 型號(hào)： | 2N5758 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 183K |
| 代理商： | 2N5758 |
1
Motorola Bipolar Power Transistor Device Data
High-Voltage High-Power
Silicon Transistors
. . . designed for use in high power audio amplifier applications and high voltage
switching regulator circuits.
High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min)
DC Current Gain @ IC = 3.0 Adc —
hFE = 25 (Min)
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 3.0 Adc
MAXIMUM RATINGS (1)
Rating
Symbol
2N5758
Unit
Collector–Emitter Voltage
VCEO
100
Vdc
Collector–Base Voltage
VCB
100
Vdc
Emitter–Base Voltage
VEB
7.0
Vdc
Collector Current — Continuous
Peak
IC
6.0
10
Adc
Base Current
IB
4.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
150
0.857
Watts
W/
_C
Operating and Storage Junction,
Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS (1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
1.17
_C/W
(1) Indicates JEDEC Registered Data.
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
160
0
25
50
75
100
125
150
175
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
120
80
40
20
Safe area limits are indicated by Figure 5. Both limits are applicable and must be observed.
140
100
60
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5758/D
2N5745
(See 2N4398)
Motorola, Inc. 1995
2N5758
6 AMPERE
POWER TRANSISTOR
NPN SILICON
100 – 140 VOLTS
150 WATTS
CASE 1–07
TO–204AA
(TO–3)
REV 7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5759 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 6A 3PIN TO-3 - Bulk |
| 2N575A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 25A I(C) | STR-1/4 |
| 2N5760 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 140V 6A 3PIN TO-3 - Bulk |
| 2N5764 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SI NPN POWER BJT |
| 2N5769 | 功能描述:兩極晶體管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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