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參數(shù)資料
| 型號： | 2N5785N1 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR, TO-276AA |
| 封裝： | HERMETIC SEALED, METAL, SMD0.5, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 340K |
| 代理商： | 2N5785N1 |
NPN SILICON
SWITCHING TRANSISTOR
2N5785N1
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8788
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
V(BR)CER
(1)
Collector-Emitter
Breakdown Voltage
IC = 100A
RBE = 100
65
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage
IC = 10mA
50
V
VCE = 50V
10
A
ICER
Collector Cut-Off Current
RBE = 100
TC = 150°C
1.0
mA
VBE = -1.5V
VCE = 60V
10
A
ICEX
Collector Cut-Off Current
TC = 150°C
1.0
mA
ICEO
Collector Cut-Off Current
VCE = 35V
IB = 0
100
IEBO
Emitter Cut-Off Current
VBE = -5V
IC = 0
10
A
IC = 1.2A
20
100
hFE
(1)
DC Forward-current transfer
ratio
VCE = 2V
IC = 3.2A
4
-
IC = 1.2A
IB = 0.12A
0.75
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = 3.2A
IB = 0.8A
2
VBE
Base-Emitter Voltage
IC = 1.2A
VCE = 2V
1.5
V
DYNAMIC CHARACTERISTICS
IC = 0.1A
VCE = 2V
| hfe |
Magnitude of Common-
Emitter Small-Signal Short-
Circuit forward Current,
Transfer Ratio
f = 4MHz
5
25
-
ton
Turn-On Time
IC = 1.0A
VCC = 30V
5
toff
Turn-Off Time
IB1 = IB2 = 0.1A
15
s
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
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