參數資料
型號： 2N5881
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝： METAL, TO-3, 2 PIN
文件頁數： 11/61頁
文件大?。?/td> 421K
代理商： 2N5881
Surface Mount Package Information and Tape and Reel Specifications
4–2
Motorola Bipolar Power Transistor Device Data
INFORMATION FOR USING SURFACE MOUNT PACKAGES
RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to ensure proper solder connection inter-
face between the board and the package. With the correct
pad geometry, the packages will self align when subjected to
a solder reflow process.
POWER DISSIPATION FOR A SURFACE MOUNT DEVICE
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device. For example,
for a D2PAK, PD is calculated as follows.
PD =
150
°C – 25°C
50
°C/W
= 2.5 watts
The 50
°C/W for the D2PAK package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 2.5 watts. There are
other alternatives to achieving higher power dissipation from
the surface mount packages. One is to increase the area of
the drain/collector pad. By increasing the area of the drain/
collector pad, the power dissipation can be increased.
Although the power dissipation can almost be doubled with
this method, area is taken up on the printed circuit board
which can defeat the purpose of using surface mount
technology. For example, a graph of R
θJA versus drain pad
area is shown in Figures 1 and 2.
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad
. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
DPAK
0.19
0
4.82
6
mm
inches
0.10
0
2.54
0.063
1.6
0.165
4.191
0.118
3.0
0.243
6.172
D2PAK
mm
inches
0.33
8.38
0.08
2.032
0.04
1.016
0.63
17.02
0.42
10.6
6
0.1
2
3.0
5
0.24
6.096
1.75 Watts
Board Material = 0.0625
″
G–10/FR–4, 2 oz Copper
80
100
60
40
20
10
8
6
4
2
0
3.0 Watts
5.0 Watts
TA = 25°C
A, AREA (SQUARE INCHES)
T
O
AMBIENT
(
C/W)°
R
JA
,T
HERM
AL
RESIS
TA
NCE,
JUNC
T
ION
θ
Figure 1. Thermal Resistance versus Drain Pad
Area for the DPAK Package (Typical)
Figure 2. Thermal Resistance versus Drain Pad
Area for the D2PAK Package (Typical)
2.5 Watts
A, AREA (SQUARE INCHES)
Board Material = 0.0625
″
G–10/FR–4, 2 oz Copper
TA = 25°C
60
70
50
40
30
20
16
14
12
10
8
6
4
2
0
3.5 Watts
5 Watts
T
O
AMBIENT
(
C/W)°
R
JA
,T
HERM
AL
RESIS
TA
NCE,
JUNC
T
ION
θ
相關PDF資料
PDF描述
2N6040BA 8 A, 60 V, PNP, Si, POWER TRANSISTOR
2N6042BU 8 A, 100 V, PNP, Si, POWER TRANSISTOR
2N6043BG 8 A, 60 V, NPN, Si, POWER TRANSISTOR
2N6045AJ 8 A, 100 V, NPN, Si, POWER TRANSISTOR
2N6045BU 8 A, 100 V, NPN, Si, POWER TRANSISTOR
相關代理商/技術參數
參數描述
2N5882 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 80V 30A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 15A 3PIN TO-3 - Bulk 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 制造商:NTE Electronics 功能描述:T-NPN SI- PO AMP
2N5882/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon NPN High Power Transistor
2N5883 功能描述:兩極晶體管 - BJT 25A 60V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5883 制造商:UNBRANDED 功能描述:TRANSISTOR PNP TO-3
2N5883/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Silicon High-Power Transistors
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