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參數(shù)資料
| 型號(hào)： | 2N5882 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 146K |
| 代理商： | 2N5882 |
1
Motorola Bipolar Power Transistor Device Data
Silicon NPN High-Power
Transistor
. . . designed for general–purpose power amplifier and switching applications.
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min)
DC Current Gain —
hFE = 20 (Min) @ IC = 6.0 Adc
Low Collector — Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 7.0 Adc
High Current — Gain–Bandwidth Product —
fT = 4.0 MHz (Min) @ IC = 1.0 Adc
MAXIMUM RATlNGS (1)
Rating
Symbol
Max
Unit
Collector–Emitter Voltage
VCEO
80
Vdc
Collector–Base Voltage
VCB
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
15
30
Adc
Base Current
IB
5.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
160
0.915
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
1.1
_C/W
(1) Indicates JEDEC registered data. Units and conditions differ on some parameters and
re–registration reflecting these changes has been requested. All above values meet or exceed
present JEDEC registered data.
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
160
0
25
50
75
100
125
150
175
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
120
80
40
20
140
100
60
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5882/D
Motorola, Inc. 1998
2N5882
Motorola Preferred Device
15 AMPERE
SILICON
POWER TRANSISTOR
80 VOLTS
160 WATTS
CASE 1–07
TO–204AA
(TO–3)
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|---|---|
| 2N5884 | 25 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N5885 | 25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N5886 | 25 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N5936R1 | 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N5950/D81Z | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5882/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon NPN High Power Transistor |
| 2N5883 | 功能描述:兩極晶體管 - BJT 25A 60V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5883 | 制造商:UNBRANDED 功能描述:TRANSISTOR PNP TO-3 |
| 2N5883/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Silicon High-Power Transistors |
| 2N5883G | 功能描述:兩極晶體管 - BJT 25A 60V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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