參數(shù)資料
型號: 2N5882
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA
文件頁數(shù): 6/6頁
文件大?。?/td> 146K
代理商: 2N5882
2N5882
6
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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2N5882/D
相關(guān)PDF資料
PDF描述
2N5884 25 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
2N5885 25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
2N5886 25 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N5936R1 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N5950/D81Z VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5882/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon NPN High Power Transistor
2N5883 功能描述:兩極晶體管 - BJT 25A 60V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5883 制造商:UNBRANDED 功能描述:TRANSISTOR PNP TO-3
2N5883/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Silicon High-Power Transistors
2N5883G 功能描述:兩極晶體管 - BJT 25A 60V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2