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參數(shù)資料
| 型號： | 2N6043G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Medium−Power Complementary Silicon Transistors |
| 中文描述： | 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 2N6043G |
Semiconductor Components Industries, LLC, 2006
May, 2006 Rev. 7
1
Publication Order Number:
2N6040/D
PNP 2N6040, 2N6042,
NPN 2N6043, 2N6045
2N6043 and 2N6045 are Preferred Devices
Plastic MediumPower
Complementary Silicon
Transistors
Plastic mediumpower complementary silicon transistors are
designed for generalpurpose amplifier and lowspeed switching
applications.
Features
High DC Current Gain h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
CollectorEmitter Sustaining Voltage @ 100 mAdc
V
CEO(sus)
= 60 Vdc (Min) 2N6040, 2N6043
= 100 Vdc (Min) 2N6042, 2N6045
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 4.0 Adc 2N6043,44
= 2.0 Vdc (Max) @ I
C
= 3.0 Adc 2N6042, 2N6045
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
PbFree Packages are Available*
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
2N6043
2N6045
T
J
, T
stg
CollectorBase Voltage
2N6040
2N6045
EmitterBase Voltage
V
EB
5.0
Collector Current
Continuous
I
C
8.0
Derate above 25
°
C
0.60
W/
°
C
Operating and Storage Junction
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1
TO220AB
CASE 221A09
STYLE 1
MARKING DIAGRAM
2N604x = Device Code
x = 0, 2, 3, or 5
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbFree Package
http://onsemi.com
DARLINGTON, 8 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 100 VOLTS, 75 WATTS
Preferred
devices are recommended choices for future use
and best overall value.
2N604xG
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6044 | 功能描述:達林頓晶體管 NPN Darl Pwr RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6045 | 功能描述:達林頓晶體管 NPN Darl SW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6045G | 功能描述:達林頓晶體管 8A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6046 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 20A 3PIN TO-63 - Bulk |
| 2N6047 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 20A 3PIN TO-63 - Bulk |
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