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參數(shù)資料
| 型號： | 2N6043G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Medium−Power Complementary Silicon Transistors |
| 中文描述： | 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 2N6043G |
PNP 2N6040, 2N6042, NPN 2N6043, 2N6045
http://onsemi.com
4
20
1.0
Figure 5. ActiveRegion Safe Operating Area
V
, COLLECTOREMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.02
2.0
3.0
7.0
50
100
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25
°
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
70
I
0.05
T
J
= 150
°
C
dc
1.0ms
5.0ms
100 s
0.5
0.2
5.0
2N6040, 2N6043
2N6045
0.1
10
20
30
500 s
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150
°
C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
< 150
°
C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
300
Figure 6. SmallSignal Current Gain
V
R
, REVERSE VOLTAGE (VOLTS)
30
0.5
1.0
2.0
100
5.0
0.1
0.2
C
200
70
50
T
J
= 25
°
C
C
ib
100
C
ob
PNP
NPN
10,000
1.0
Figure 7. Capacitance
f, FREQUENCY (kHz)
10
2.0
5.0
20
50
1000
100
10
10
20
h5000
3000
2000
1000
300
200
100
30
20
200
500
PNP
NPN
T
C
= 25
°
C
V
CE
= 4.0 Vdc
I
C
= 3.0 Adc
50
20,000
0.1
Figure 8. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
200
0.2
0.3
0.5
1.0
2.0
10
h
0.7
7.0
PNP
2N6040, 2N6042
NPN
2N6043, 2N6045
10,000
T
J
= 150
°
C
25
°
C
55
°
C
I
C
, COLLECTOR CURRENT (AMP)
h
V
CE
= 4.0 V
T
J
= 150
°
C
25
°
C
55
°
C
7000
5000
3000
2000
1000
700
500
300
3.0
5.0
V
CE
= 4.0 V
20,000
0.1
200
0.2
0.3
0.5
1.0
2.0
10
0.7
7.0
10,000
7000
5000
3000
2000
1000
700
500
300
3.0
5.0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6044 | 功能描述:達(dá)林頓晶體管 NPN Darl Pwr RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6045 | 功能描述:達(dá)林頓晶體管 NPN Darl SW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6045G | 功能描述:達(dá)林頓晶體管 8A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6046 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 20A 3PIN TO-63 - Bulk |
| 2N6047 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 20A 3PIN TO-63 - Bulk |
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