參數(shù)資料
型號： 2N6071A
廠商： ON SEMICONDUCTOR
元件分類： 晶閘管
英文描述： Sensitive Gate Triacs
中文描述： 200 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-225
封裝： CASE 77-09, 3 PIN
文件頁數(shù)： 2/8頁
文件大小： 119K
代理商： 2N6071A
2N6071A/B Series
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θ
JC
R
θ
JA
Max
3.5
Unit
°
C/W
*Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
75
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
TL
260
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25
°
C
TJ = 110
°
C
IDRM,
IRRM
—
—
—
—
10
2
μ
A
mA
ON CHARACTERISTICS
*Peak On-State Voltage(1)
(ITM =
6 A Peak)
VTM
—
—
2
Volts
*Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = –40
°
C)
All Quadrants
VGT
—
1.4
2.5
Volts
Gate Non–Trigger Voltage
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = 110
°
C)
All Quadrants
VGD
0.2
—
—
Volts
*Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current =
1 Adc)
(TJ = –40
°
C)
(TJ = 25
°
C)
IH
—
—
—
—
30
15
mA
Turn-On Time
(ITM = 14 Adc, IGT = 100 mAdc)
tgt
—
1.5
—
μ
s
QUADRANT
(Maximum Value)
Type
IGT
@
TJ
+25
°
C
I
mA
II
mA
III
mA
IV
mA
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc RL= 100 ohms)
(Main Terminal Voltage = 12 Vdc, RL = 100 ohms)
2N6071A
2N6073A
2N6075A
5
5
5
10
–40
°
C
20
20
20
30
2N6071B
2N6073B
2N6075B
+25
°
C
3
3
3
5
–40
°
C
15
15
15
20
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
@ VDRM, TJ = 85
°
C, Gate Open, ITM = 5.7 A, Exponential Waveform,
Commutating di/dt = 2.0 A/ms
dv/dt(c)
—
5
—
V/
μ
s
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
相關(guān)PDF資料
PDF描述
2N6071B Sensitive Gate Triacs
2N6073A Sensitive Gate Triacs
2N6073B Sensitive Gate Triacs
2N6075A Sensitive Gate Triacs
2N6075B Sensitive Gate Triacs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6071A_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Triacs Silicon Bidirectional Thyristors
2N6071AG 功能描述:雙向可控硅 THY 4A 200V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
2N6071AG 制造商:ON Semiconductor 功能描述:Triac
2N6071ATG 功能描述:雙向可控硅 SENSITIVE GATE RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
2N6071B 功能描述:雙向可控硅 THY 4A 200V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
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