參數(shù)資料
型號： 2N6075A
廠商： ON SEMICONDUCTOR
元件分類： 晶閘管
英文描述： Sensitive Gate Triacs
中文描述： 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-225
封裝： CASE 77-09, 3 PIN
文件頁數(shù)： 1/8頁
文件大?。?/td> 119K
代理商： 2N6075A
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1
Publication Order Number:
2N6071/D
Preferred Device
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
Blocking Voltages to 600 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Device Marking: Device Type, e.g., 2N6071A, Date Code
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
*Peak Repetitive Off-State Voltage(1)
(TJ =
40 to 110
°
C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6071A,B
2N6073A,B
2N6075A,B
Symbol
Value
Unit
VDRM,
VRRM
200
400
600
Volts
*On-State RMS Current (TC = 85
°
C)
Full Cycle Sine Wave 50 to 60 Hz
IT(RMS)
4.0
Amps
*Peak Non–repetitive Surge Current
(One Full cycle, 60 Hz, TJ = +110
°
C)
ITSM
30
Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I2t
3.7
A2s
*Peak Gate Power
(Pulse Width
≤
1.0
μ
s, TC = 85
°
C)
PGM
10
Watts
*Average Gate Power
(t = 8.3 ms, TC = 85
°
C)
PG(AV)
0.5
Watt
*Peak Gate Voltage
(Pulse Width
≤
1.0
μ
s, TC = 85
°
C)
VGM
5.0
Volts
*Operating Junction Temperature Range
TJ
–40 to
+110
°
C
*Storage Temperature Range
Tstg
–40 to
+150
°
C
Mounting Torque (6-32 Screw)(2)
—
8.0
in. lb.
*Indicates JEDEC Registered Data.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of a compression washer. Mounting torque in
excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
TRIACS
4 AMPERES RMS
200 thru 600 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
2N6071A
TO225AA
500/Box
http://onsemi.com
2N6071B
TO225AA
500/Box
2N6073A
TO225AA
500/Box
2N6073B
TO225AA
500/Box
2N6075A
TO225AA
500/Box
2N6075B
TO225AA
500/Box
TO–225AA
(formerly TO–126)
CASE 077
STYLE 5
1
2
3
PIN ASSIGNMENT
1
2
3
Main Terminal 2
Gate
Main Terminal 1
MT1
G
MT2
相關(guān)PDF資料
PDF描述
2N6075B Sensitive Gate Triacs
2N6073A TRIACs 4 AMPERES RMS 200 thru 600 VOLTS
2N6073B TRIACs 4 AMPERES RMS 200 thru 600 VOLTS
2N6075A TRIACs 4 AMPERES RMS 200 thru 600 VOLTS
2N6075B TRIACs 4 AMPERES RMS 200 thru 600 VOLTS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6075A 制造商:ON Semiconductor 功能描述:TRIAC 4A 600V TO-126
2N6075AG 功能描述:雙向可控硅 Sensitive Gate RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
2N6075B 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
2N6075BG 功能描述:雙向可控硅 Sensitive Gate RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
2N6076 功能描述:兩極晶體管 - BJT PNP 25V 10mA 500hfe RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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