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參數(shù)資料
| 型號(hào)： | 2N6073 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | 4 Ampere RMS Silicon Bidirectional Thyristor(4A（均方根值），400V，硅雙向晶閘管) |
| 中文描述： | 4安培有效值硅雙向晶閘管（第4A（均方根值）分別為400V，硅雙向晶閘管） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | 2N6073 |
Semiconductor Components Industries, LLC, 2004
September, 2004 Rev. 5
1
Publication Order Number:
2N6071/D
2N6071A/B Series
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Features
PbFree Package is Available*
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
Gate Triggering: 4 Mode 2N6071A, B; 2N6073A, B; 2N6075A, B
Blocking Voltages to 600 V
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Device Marking: Device Type, e.g., 2N6071A, Date Code
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TRIACS
4.0 A RMS, 200 600 V
Preferred
devices are recommended choices for future use
and best overall value.
TO225
CASE 077
STYLE 5
1
2
3
MT1
G
MT2
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
x
y
Y
WW
= 1, 3, 5
= A, B
= Year
= Work Week
MARKING DIAGRAM
YWW
2N
60xy
REAR VIEW
SHOW TAB
1. Cathode
2. Anode
3. Gate
http://onsemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6075 | 4 Ampere RMS Silicon Bidirectional Thyristor(4A（均方根值），600V，硅雙向晶閘管) |
| 2N6077 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
| 2N6079 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
| 2N6097 | TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 6A I(C) | SOT-123VAR |
| 2N6098 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-220AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6073A | 功能描述:雙向可控硅 THY 4A 400V TRIAC RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6073A | 制造商:ON Semiconductor 功能描述:TRIAC 4A 400V TO-126 |
| 2N6073AG | 功能描述:雙向可控硅 THY 4A 400V TRIACR RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6073B | 功能描述:雙向可控硅 THY 4A 400V TRIAC RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6073BG | 功能描述:雙向可控硅 Sensitive Gate RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
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