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參數(shù)資料
| 型號： | 2N6075AG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 中文描述： | 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-225 |
| 封裝： | LEAD FREE, CASE 77-09, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 84K |
| 代理商： | 2N6075AG |
2N6071A/B Series
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
*Peak Repetitive Off-State Voltage (Note 1)
(T
J
=
40 to 110
°
C, Sine Wave, 50 to 60 Hz, Gate Open)
2N6071A,B
2N6073A,B
2N6075A,B
V
DRM,
V
RRM
200
400
600
V
*On-State RMS Current (T
C
= 85
°
C) Full Cycle Sine Wave 50 to 60 Hz
I
T(RMS)
4.0
A
*Peak Nonrepetitive Surge Current (One Full cycle, 60 Hz, T
J
= +110
°
C)
I
TSM
I
2
t
30
A
Circuit Fusing Considerations (t = 8.3 ms)
3.7
A
2
s
*Peak Gate Power (Pulse Width
≤
1.0 s, T
C
= 85
°
C)
P
GM
10
W
*Average Gate Power (t = 8.3 ms, T
C
= 85
°
C)
P
G(AV)
0.5
W
*Peak Gate Voltage (Pulse Width
≤
1.0 s, T
C
= 85
°
C)
V
GM
5.0
V
*Operating Junction Temperature Range
T
J
40 to +110
°
C
*Storage Temperature Range
T
stg
40 to +150
°
C
Mounting Torque (6-32 Screw) (Note 2)
8.0
in. lb.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
and V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
2. Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, JunctiontoCase
R
JC
3.5
°
C/W
Thermal Resistance, JunctiontoAmbient
R
JA
75
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
T
L
260
°
C
*Indicates JEDEC Registered Data.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6075BG | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 2N6071A | Sensitive Gate Triacs |
| 2N6071B | Sensitive Gate Triacs |
| 2N6073A | Sensitive Gate Triacs |
| 2N6073B | Sensitive Gate Triacs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6075B | 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6075BG | 功能描述:雙向可控硅 Sensitive Gate RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| 2N6076 | 功能描述:兩極晶體管 - BJT PNP 25V 10mA 500hfe RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6076_1 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:SILICON PNP SMALL SIGNAL TRANSISTOR |
| 2N6076_D26Z | 功能描述:兩極晶體管 - BJT Si NPN Transistor Small Signal RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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