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參數(shù)資料
| 型號(hào)： | 2N6240 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon controlled Rectifiers Reverse Blocking Triode Thyristors |
| 中文描述： | 4.082 A, 400 V, SCR, TO-225AA |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | 2N6240 |
1
Motorola Thyristor Device Data
Motorola, Inc. 1999
Reverse Blocking Triode Thyristors
. . . PNPN devices designed for high volume consumer applications such as
temperature, light, and speed control; process and remote control, and warning
systems where reliability of operation is important.
Passivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Recommended Electrical Replacement for C106
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
*Repetitive Peak Forward and Reverse Blocking Voltage(1)
(1/2 Sine Wave)
(RGK = 1000 ohms, TC = –40 to +110
°
C)
VDRM
or
VRRM
400
Volts
*Non–repetitive Peak Reverse Blocking Voltage
(1/2 Sine Wave, RGK = 1000 ohms,
TC = –40
°
to +110
°
C)
VRSM
450
Volts
*Average On–State Current
(TC = –40 to + 90
°
C)
(TC = +100
°
C)
IT(AV)
2.6
1.6
Amps
*Surge On–State Current
(1/2 Sine Wave, 60 Hz, TC = +90
°
C)
(1/2 Sine Wave, 1.5 ms, TC = +90
°
C)
ITSM
25
35
Amps
Circuit Fusing
(t = 8.3 ms)
I2t
2.6
A2s
*Peak Gate Power
(Pulse Width = 10
μ
s, TC = 90
°
C)
PGM
0.5
Watts
*Indicates JEDEC Registered Data.
(continued)
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Order this document
by 2N6240/D
SEMICONDUCTOR TECHNICAL DATA
CASE 77-08
(TO-225AA)
STYLE 2
SCRs
4 AMPERES RMS
400 VOLTS
K
A
G
A
K
A
G
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|---|---|
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