參數(shù)資料
型號: 2N6240
廠商: MOTOROLA INC
元件分類: 晶閘管
英文描述: Silicon controlled Rectifiers Reverse Blocking Triode Thyristors
中文描述: 4.082 A, 400 V, SCR, TO-225AA
文件頁數(shù): 2/4頁
文件大小: 55K
代理商: 2N6240
2
Motorola Thyristor Device Data
MAXIMUM RATINGS — continued
(TJ = 25
°
C unless otherwise noted.)
Rating
Unit
Value
Symbol
*Average Gate Power
(t = 8.3 ms, TC = 90
°
C)
PG(AV)
0.1
Watt
Peak Forward Gate Current
IGM
VRGM
TJ
Tstg
0.2
Amp
Peak Reverse Gate Voltage
6
Volts
*Operating Junction Temperature Range
–40 to +110
°
C
*Storage Temperature Range
Mounting Torque(1)
–40 to +150
°
C
6
in. lb.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
*Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
3
°
C/W
Thermal Resistance, Junction to Ambient
75
°
C/W
*Indicates JEDEC Registered Data.
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C and RGK = 1000 ohms unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
*Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM)
TC = 25
°
C
TC = 110
°
C
IDRM, IRRM
10
200
μ
A
μ
A
*Peak Forward “On” Voltage
(ITM = 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle)
Gate Trigger Current (Continuous dc)(2)
(VAK = 12 Vdc, RL = 24 Ohms)
*(VAK = 12 Vdc, RL = 24 Ohms,
TC = –40
°
C)
VTM
2.2
Volts
IGT
200
500
μ
A
Gate Trigger Voltage (Continuous dc)
(Source Voltage = 12 V, RS = 50 Ohms)
*(VAK = 12 Vdc, RL = 24 Ohms, TC = –40
°
C)
VGT
1
Volts
Gate Non–Trigger Voltage
(VAK = Rated VDRM, RL = 100 Ohms, TC = 110
°
C)
VGD
0.2
Volts
Holding Current
(VAK = 12 Vdc, IGT = 2 mA)
*(Initiating On–State Current = 200 mA)
TC = 25
°
C
TC = –40
°
C
IH
5
10
mA
*Total Turn–On Time
(Source Voltage = 12 V, RS = 6 k Ohms)
(ITM = 8.2 A, IGT = 2 mA, Rated VDRM)
(Rise Time = 20 ns, Pulse Width = 10
μ
s)
tgt
2
μ
s
Forward Voltage Application Rate
(VD = Rated VDRM, TC = 110
°
C)
dv/dt
10
V/
μ
s
*Indicates JEDEC Registered Data.
1. Torque rating applies with use of compression washer (B52200F006 or equivalent). Mounting torque in excess of 6 in. lb. does not appreciably
lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. (See AN–209 B)
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200
°
C. For optimum
results an activated flux (oxide removing) is recommended.
2. Measurement does not include RGK current.
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