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參數(shù)資料
| 型號(hào)： | 2N6385SMD05R4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
| 封裝： | SMD05, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | 2N6385SMD05R4 |
2N6385SMD05
VCEO
Collector – Emitter Voltage
VCEX
Collector – Emitter Voltage
VCBO
Collector – Base Voltage
VEBO
Emitter – Base Voltage
IC
Continuous Collector Current
ICM
Peak Collector Current
IB
Base Current - Continuous
Ptot
Total Dissipation at Tcase = 25°C
Derate above 25°C
TSTG , TJ
Operating and Storage Junction Temperature Range(2)
80V
5V
10A
15A
0.25A
100W
0.571W/°C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
2
1
3
2.41 (0.095)
(0.030)
min.
3.05
(0.120)
5.72
(.225)
0.127 (0.005)
(0.296)
1
0
.16
(0.4
00
)
0.76
(0.030)
min.
3.175 (0.125)
Max.
0.50 (0.020)
max.
7.54
0.76
2.41 (0.095)
0.127 (0.005)
(0.286)
7.26
16 PLCS
0.50(0.020)
0.127 (0.005)
SILICON POWER NPN
DARLINGTON TRANSISTOR
FEATURES
High Gain Darlington Performance
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated)
APPLICATIONS
Audio Amplifiers
Hammer Drivers
Shunt and Series Regulators
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 6387
Issue 1
SMD05 (TO-276AA)
Pad 1 – Base
Pad 2 – Collector
Pad 3 – Emitter
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| 2N6385 | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6385SX | 制造商:RCA 功能描述: |
| 2N6386 | 功能描述:兩極晶體管 - BJT NPN Pwr Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6387 | 功能描述:兩極晶體管 - BJT NPN Pwr Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6387/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Plastic Medium-Power Transistors |
| 2N6387_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS |
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