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參數(shù)資料
| 型號： | 2N6385SMD05R4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
| 封裝： | SMD05, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | 2N6385SMD05R4 |
2N6385SMD05
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
IC = 200mA
IB = 0
VCE = 80V
IB = 0
VCE = VCEO(BR) VBE(off) = 1.5V
TC = 150°C
VEB = 5V
IC = 0
REB =100Ω
IC = 200mA
VBE(off) = 1.5V
IC = 200mA
VCE = 3V
IC = 5A
VCE = 3V
IC = 10A
IC = 5A
IB = 0.01A
IC = 10A
IB = 0.1A
VCE = 3V
IC = 5A
VCE = 3V
IC = 10A
IF = 10A
VCB =10V
IE = 0
ftest= 1.0MHz
VCE = 5V
IC = 1.0A
f = 1.0KHz
VCE = 5V
IC = 1.0A
f = 1.0KHz
L =12mH
RBE = 100Ω
VBE(off) = 1.5V
IC = 4.5A
Collector – Emitter Breakdown
Voltage
Collector Cut–off Current
Emitter Cut–off Current
Collector–Emitter Breakdown
Voltage*
Collector–Emitter Breakdown
Voltage*
DC Current Gain
Collector – Emitter
Saturation Voltage
Base – Emitter On Voltage
Diode Forward Voltage
Output Capacitance
*Magnitude of Common Emitter
Small Signal Short-Circuit
Common Emitter Small Signal
Short-Circuit Forward
Energy with Base-Reverse Biased
80
1.0
0.3
3.0
10
80
1000
20000
100
2.0
3.0
2.8
4.5
4.0
200
20
1000
120
V
mA
V
—
V
pF
—
mJ
VCEO(BR)*
ICEO
ICEV
IEBO
VCER(BR)
VCEV(BR)
hFE
VCE(sat)
VBE(on)
VF
Cob
lhfel
hfe
Es/b
OFF CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
SECOND BREAKDOWN
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
* Pulse test tp = 300μs , Duty Cycle ≤ 2%
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 6387
Issue 1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6385SX | 制造商:RCA 功能描述: |
| 2N6386 | 功能描述:兩極晶體管 - BJT NPN Pwr Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6387 | 功能描述:兩極晶體管 - BJT NPN Pwr Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6387/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Plastic Medium-Power Transistors |
| 2N6387_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS |
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