參數(shù)資料
型號： 2N6450
廠商： InterFET Corporation
英文描述： Precision, Dual Supply, SPST, Analog CMOS Switches
中文描述： N溝道硅結(jié)場效應(yīng)晶體管
文件頁數(shù)： 1/1頁
文件大?。?/td> 91K
代理商： 2N6450
B-24
01/99
2N6449, 2N6450
N-Channel Silicon Junction Field-Effect Transistor
￥ High Voltage
Absolute maximum ratings at T
A
= 25C
2N6449
– 300 V
– 300 V
10 mA
800 mW
6.4 mW/°C 6.4 mW/°C
2N6450
– 200 V
– 200 V
10 mA
800 mW
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
TOD39 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature:
2N6449
2N6450
Process NJ42
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
– 300
– 200
V
nA
nA
μA
μA
V
mA
I
G
= – 10 μA, V
DS
= V
V
GS
= – 150V, V
DS
= V
V
GS
= – 100V, V
DS
= V
V
GS
= – 150V, V
DS
= V
V
GS
= – 100V, V
DS
= V
V
DS
= 30V, I
D
= 4 nA
V
DS
= 30V, V
GS
= V
– 100
Gate Reverse Current
I
GSS
– 100
– 100
T
A
= 150°C
T
A
= 150°C
– 100
– 15
10
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
GS(OFF)
I
DSS
– 2
2
– 15
10
– 2
2
Dynamic Electrical Characteristics
Common Source Forward
Transfer Admittance
Y
fs
0.5
3
0.5
3
mS
V
DS
= 30V, V
GS
= V
f = 1 kHz
Common Source Output Conductance
Common Source Input Capacitance
Y
os
C
iss
100
20
100
20
μS
pF
V
DS
= 30V, V
GS
= V
V
DS
= 30V, V
GS
= V
f = 1 kHz
f = 1 MHz
Common Source
Reverse Transfer Capacitance
C
rss
2.5
2.5
pF
V
DS
= 30V, V
GS
= V
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
相關(guān)PDF資料
PDF描述
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2N6451 制造商:INTERFET 制造商全稱:INTERFET 功能描述:N-Channel Silicon Junction Field-Effect Transistor
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