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參數(shù)資料
| 型號： | 2N6654 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| 中文描述： | 20 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | HERMETIC SEALED, METAL, TO-3, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 12K |
| 代理商： | 2N6654 |
2N6654
Bipolar NPN Device.
V
CEO
= 350V
I
C
= 20A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
350
V
I
C(CONT)
20
A
h
FE
@ 15/10 (V
CE
/ I
C
)
10
-
f
t
75M
Hz
P
D
150
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
31-Jul-02
TO3 (TO204AA)
PINOUTS
1 – Base
2 – Emitter
Case - Collector
Bipolar NPN Device in a
Hermetically sealed TO3
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
1
2
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
3
3
2
3
1
1
3.84 (0.151)
4.09 (0.161)
0
1
7.92 (0.312)
12.70 (0.50)
2
(
m
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6655 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device |
| 2N6658 | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor, N-Channel, TO-3 |
| 2N6659 | 功能描述:MOSFET 35V 1.8 OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N6659-2 | 制造商:Vishay Siliconix 功能描述:N-CH MOSFET TO-39 35V 1.8 OHM (JANTX SIMILAR) - Bulk |
| 2N6659-E3 | 功能描述:MOSFET 35V 1.8 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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