參數(shù)資料
型號: 2N6660
廠商: VISHAY SILICONIX
元件分類: 小信號晶體管
英文描述: 990 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD
封裝: TO-39, 3 PIN
文件頁數(shù): 1/3頁
文件大小: 101K
代理商: 2N6660
Vishay Siliconix
2N6660JAN/JANTX/JANTXV
Document Number: 70223
S-70037-Rev. C, 15-Jan-07
www.vishay.com
1
JAN Qualified N-Channel 60-V (D-S) MOSFET
FEATURES
Military Qualified
Low On-Resistence: 1.3
Ω
Low Threshold: 1.7 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 8 ns
Low Input and Output Leakage
BENEFITS
Guaranteed Reliability
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
APPLICATIONS
Military Applications
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
PRODUCT SUMMARY
V(BR)DSS Min (V)
rDS(on) Max (Ω)VGS(th) (V)
ID (A)
60
3 at VGS = 10 V
0.8 to 2
0.99
1
2
3
TO-205AD
(TO-39)
Top View
D
G
S
Notes:
a. Pulse width limited by maximum junction temperature.
b. Not required by military spec.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
0.99
A
TC = 100 °C
0.62
Pulsed Drain Currenta
IDM
3
Power Dissipation
TC = 25 °C
PD
6.25
W
TA = 25 °C
0.725
Thermal Resistance, Junction-to-Ambientb
RthJA
170
°C/W
Thermal Resistance, Junction-to-Case
RthJC
20
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
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