- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30463 > 2N6661-E3 (VISHAY SILICONIX) 860 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD PDF資料下載
參數(shù)資料
| 型號： | 2N6661-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 860 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 封裝： | LEAD FREE, TO-39 TOLL LID, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 124K |
| 代理商： | 2N6661-E3 |
2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
S11-1542-Rev. D, 01-Aug-11
3
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Ohmic Region Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Output Characteristics for Low Gate Drive
On-Resistance vs. Gate-to-Source Voltage
Normalized On-Resistance
vs. Junction Temperature
VDS -)
V
(
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
1.0
0
1.0
2.0
3.0
4.0
5.0
0.8
0.6
0.4
0.2
0
6 V
5 V
4 V
3 V
2 V
VGS = 10 V
I D
-Drain
Current
(A)
VGS -)
V
(
e
g
a
t
l
o
V
e
c
r
u
o
S
-
e
t
a
G
0.5
0.4
0.3
0
1
2
0
0.2
0.1
46
8
125 °C
VDS = 15 V
25 °C
I D
-
Drain
Current
(A)
TJ = - 55 °C
ID - Drain Current (A)
10
8
6
0
5
.
2
5
.
0
4
2
1.0
1.5
2.0
VGS = 10 V
R
DS
(on)
-Drain-Source
On-Resistance
(Ω
)
V
DS - Drain-to-Source Voltage (V)
100
0
0.4
0.8
1.2
1.6
2.0
80
60
40
20
0
2.8 V
2.6 V
2.4 V
2.2 V
2.0 V
1.8 V
VGS = 3 V
I D
-Drain
Current
(mA)
VGS - Gate-Source Voltage (V)
7
048
12
16
20
6
5
4
0
3
2
1
ID = 0.1 A
0.5 A
1.0 A
R
DS
(o
n)
-On-Resistance
(Ω
)
TJ - Junction Temperature (°C)
2.25
2.00
1.75
0.50
-50
-
0
5
1
0
1
1.50
1.25
30
70
110
1.00
0.75
VGS = 10 V
R
DS
(o
n)
-Drain-Source
On-Resistance
(Normalized)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6661JTX02 | 860 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6661JTXP02 | 860 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6661M1A | 1 A, 90 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 2N6661 | 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 |
| 2N6667 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6661-E3/ | 制造商:Vishay Siliconix 功能描述:MOSFET |
| 2N6661JAN02 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD 制造商:Vishay Siliconix 功能描述:N-CH MOSFET TO-39 90V 4 OHM (MOTS) - Bulk |
| 2N6661JANTX | 制造商:Vishay Semiconductors 功能描述: |
| 2N6661JANTXV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 90 V (D-S) MOSFET |
| 2N6661JTVP02 | 制造商:Vishay Siliconix 功能描述:19500/547 JANTXV2N6661P WITH PIND |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。