參數(shù)資料
型號(hào): 2N6661-E3
廠商: VISHAY SILICONIX
元件分類: 小信號(hào)晶體管
英文描述: 860 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD
封裝: LEAD FREE, TO-39 TOLL LID, 3 PIN
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 124K
代理商: 2N6661-E3
2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
S11-1542-Rev. D, 01-Aug-11
4
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Threshold Region
Gate Charge
Capacitance
Load Condition Effects on Switching
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70225.
V
GS - Gate-to-Source Voltage (V)
10
1
0.01
0.5
0.1
1.0
1.5
2.0
25 °C
- 55 °C
125 °C
VGS = 5 V
TJ = 150 °C
I D
-Drain
Current
(mA)
Qg - Total Gate Charge (pC)
15.0
12.5
10.0
0
5
0
1
0
7.5
5.0
200
300
400
2.5
ID = 1.0 A
VDS = 45 V
72 V
V
GS
-Gate-to-Source
V
o
ltage
(V)
VDS - Drain-to-Source Voltage (V)
125
100
75
0
5
0
1
0
50
25
20
30
40
Coss
C iss
Crss
VGS = 0 V
f = 1 MHz
C
-Capacitance
(pF)
ID - Drain Current (A)
2
1
.
0
100
10
1
VDD = 25 V
RL = 23 Ω
VGS = 0 V to 10 V
ID = 1.0 A
td(on)
td(off)
tr
tf
t
-Switching
T
ime
(ns)
0.1
10 K
1.0
0.01
0.1
0
1
0
.
1
K
1
0
1
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Normalized
Ef
fective
T
ransient
Thermal
Impedance
t1 - Square Wave Pulse Duration (s)
1. Duty Cycle, D =
2. Per Unit Base = RthJC = 20 °C/W
3. TJM - TC = PDMZthJC(t)
t1
t2
t1
Notes:
PDM
t2
0.05
0.02
0.01
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