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參數(shù)資料
| 型號(hào)： | 2N6661JTX02 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 860 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 封裝： | TO-39 TOLL LID, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 124K |
| 代理商： | 2N6661JTX02 |
2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
S11-1542-Rev. D, 01-Aug-11
2
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. FOR DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW
300 μs duty cycle 2 %.
c. Switching time is essentially independent of operating temperature.
d. This parameter not registered with JEDEC.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN.
TYP.b
MAX.
Static
Drain-Source Breakdown Voltage
VDS
VDS = 0 V, ID = 10 μA
90
125
-
V
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 1 mA
0.8
1.6
2
TA = - 55 °C
-1.8
2.5
TA = 125 °C
0.3
1.3
-
Gate-Body Leakage
IGSS
VGS = ± 20 V
VDS = 0 V
-
± 100
nA
TA = 125 °C
-
± 500
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 72 V
--
1
μA
TA = 125 °C
-
100
On-State Drain Currentb
ID(on)
VGS = 10 V
VDS = 10 V
-1.8
-
mA
Drain-Source On-State Resistanceb
RDS(on)
VGS = 5 V
ID = 0.3 A
-3.8
5.3
VGS = 10 V
ID = 1 A
-3.6
4
TA = 125 °Cd
-6.7
7.5
Forward Transconductanceb
gfs
VDS = 7.5 V, ID = 0.475 A
170
340
-
mS
Diode Forward Voltage
VSD
VGS = 0 V
IS = 0.86 A
0.7
0.9
1.4
V
Dynamic
Input Capacitance
Ciss
VGS = 0 V
VDS = 25 V, f = 1 MHz
-35
50
pF
Output Capacitance
Coss
-15
40
Reverse Transfer Capacitance
Crss
-2
10
Drain-Source Capacitance
Cds
-30-
Switchingc
Turn-On Time
tON
VDD = 25 V, RL = 23
ID 1 A, VGEN = 10 V, Rg = 23
-6
10
ns
Turn-Off Time
tOFF
-8
10
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