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參數(shù)資料
| 型號： | 2N6661JTX02 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 860 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 封裝： | TO-39 TOLL LID, 3 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 124K |
| 代理商： | 2N6661JTX02 |
CD
P
CH
Q
L1
L2
LD
LL
Seating
Plane
LU
HD
∝
CL
TW
r
TL
LC
12
3
NOTES:
1.
Dimensions are in inches. Metric equivalents are given for general
information only.
2.
Beyond radius (r) maximum, TW shall be held for a minimum length of 0.011
(0.028 mm).
3.
Dimension TL measured from maximum HD.
4.
Outline in this zone is not controlled.
5.
Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This
zone is controlled for automatic handling.
6.
Leads at guage plane 0.054+0.001, 0.000 (1.37+0.03, 0.00 mm) below
seating plane shall be within 0.007 (0.18 mm) radius of true position (TP) at
maximum material condition (MMC) relative to tab at MMC.
7.
LU applies between L1 and L2, LD applies between L2 and L maximum.
Diameter is uncontrolled in L1 and beyond LL minimum.
8.
All three leads.
9.
Radius (r) applies to both inside corners of tab.
10. Drain is electrically connected to the case.
Package Information
Vishay Siliconix
Document Number: 71367
09-Mar-04
www.vishay.com
1
TO-205AD (TO-39 TALL LID)
INCHES
MILLIMETERS
Dim
Min
Max
Min
Max
Notes
CD
0.305
0.335
7.75
8.51
CH
0.240
0.260
6.10
6.60
HD
0.335
0.370
8.51
9.40
LC
0.200 TP
5.08 TP
6
LD
0.016
0.021
0.41
0.53
7, 8
LL
0.500
0.750
12.70
19.05
7, 8
LU
0.016
0.019
0.41
0.48
7, 8
L1
—
0.050
—
1.27
7, 8
L2
0.250
—
6.35
—
7, 8
P
0.100
—
2.54
—
5
Q
—
0.050
—
1.27
4
r
—
0.010
—
0.25
9
TL
0.029
0.045
0.74
1.14
3
TW
0.028
0.034
0.71
0.86
2
m
45_ TP
6
Dimensions (see notes 1, 2, 9, 11, 12)
ECN: S-40373—Rev. C, 15-Mar-04
DWG: 5511
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相關代理商/技術參數(shù) |
參數(shù)描述 |
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| 2N6661JTXL02 | 制造商:Vishay Siliconix 功能描述:WITH SOLDER DIP WAIVERED PART - Bulk |
| 2N6661JTXP02 | 制造商:Vishay Siliconix 功能描述:WITH PN D WAIVERED PART - Bulk |
| 2N6661JTXV02 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 90V 0.9A 3PIN TO-205AD - Bulk |
| 2N6661M1A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N6666 | 功能描述:兩極晶體管 - BJT PNP Pwr Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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