參數(shù)資料
型號： 2N6990JS
廠商： SEMICOA CORP
元件分類： 小信號晶體管
英文描述： 800 mA, 50 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： HERMETIC SEALED, FLAT PACK-14
文件頁數(shù)： 2/2頁
文件大?。?/td> 311K
代理商： 2N6990JS
2N6990
Silicon NPN Transistor
Dat a Sheet
Rev. D.2
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA
50
Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
VCB = 75 Volts
VCB = 60 Volts
10
A
nA
Collector-Base Cutoff Current
ICBO3
VCB = 60 Volts, TA = 150°C
10
A
Emitter-Base Cutoff Current
IEBO1
IEBO2
VEB = 6 Volts
VEB = 4 Volts
10
50
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
TA = -55°C
50
75
100
30
35
325
300
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.6
1.2
2.0
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.3
1.0
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 20 Volts, IC = 20 mA,
f = 100 MHz
2.5
10
Small Signal Short Circuit Forward
Current Transfer Ratio
hFE
VCE = 10 Volts, IC = 1 mA,
f = 1 kHz
50
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
8
pF
Open Circuit Input Capacitance
CIBO
VEB = 2 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
25
pF
Transistor to Transistor Resistance
|RT-T|
|VT-T| = 500 Volts
10
Switching Characteristics
Saturated Turn-On Time
tON
35
ns
Saturated Turn-Off Time
tOFF
300
ns
Semicoa
Corporation
Copyright
2010
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