- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄31622 > 2N7002K-T1-GE3 (VISHAY SILICONIX) 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 PDF資料下載
參數(shù)資料
| 型號： | 2N7002K-T1-GE3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | HALOGEN FREE AND LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 210K |
| 代理商： | 2N7002K-T1-GE3 |
Vishay Siliconix
2N7002K
Document Number: 71333
S09-0857-Rev. E, 18-May-09
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Low On-Resistance: 2
Ω
Low Threshold: 2 V (typ.)
Low Input Capacitance: 25 pF
Fast Switching Speed: 25 ns
Low Input and Output Leakage
TrenchFET Power MOSFET
2000 V ESD Protection
Compliant to RoHS Directive 2002/95/EC
BENEFITS
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
APPLICATIONS
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (mA)
60
2 at VGS = 10 V
300
TO-236
SOT-23
1
2
3
Top View
2N7002K (7K)*
* Marking Code
G
S
D
Ordering Information: 2N7002K-T1
2N7002K-T1-E3 (Lead (Pb)-free)
2N7002K-T1-GE3 (Lead (Pb)-free and Halogen-free)
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
b
TA = 25 °C
ID
300
mA
TA = 100 °C
190
Pulsed Drain Currenta
IDM
800
Power Dissipationb
TA = 25 °C
PD
0.35
W
TA = 100 °C
0.14
Maximum Junction-to-Ambientb
RthJA
350
°C/W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N7002KFN3 | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N706 | 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 2N709 | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N726 | 50 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N2945 | 100 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-46 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002KT3G | 功能描述:MOSFET SMALL SIGNAL MOSFET 60V 380mA SINGL CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002KTB | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 2N7002KTB6 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 2N7002K-TP | 功能描述:MOSFET 350mW, 60V, 340mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002KU | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:N Channel MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。