參數(shù)資料
型號： 2N7000
廠商： CALOGIC LLC
元件分類： 小信號晶體管
英文描述： N-Channel Enhancement-Mode MOS Transistor
中文描述： 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝： PLASTIC, TO-226AA, 3 PIN
文件頁數(shù)： 2/2頁
文件大?。?/td> 25K
代理商： 2N7000
2N7000 / BS170L
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25
oC unless otherwise specified)
SYMBOL
PARAMETERS
LIMITS
UNITS
TEST CONDITIONS
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±40
ID
Continuous Drain Current
0.2
A
TA = 25
oC
0.13
TA = 100
oC
IDM
Pulsed Drain Current
1
0.5
PD
Power Dissipation
1
0.4
W
TA = 25
oC
0.16
TA = 100
oC
TJ
Operating Junction Temperature Range
-55 to 150
oC
Tstg
Storage Temperature Range
-55 to 150
TL
Lead Temperature (1/16" from case for 10 sec.)
300
THERMAL RESISTANCE RATINGS
SYMBOL
THERMAL RESISTANCE
LIMITS
UNITS
RthJA
Junction-to-Ambient
312.5
K/W
NOTE:
1. Pulse width limited by maximum junction temperature.
SPECIFICATIONS
1
SYMBOL
PARAMETER
MIN
TYP
2
MAX
UNIT
TEST CONDITIONS
STATIC
V(BR)DSS
Drain-Source Breakdown Voltage
60
70
V
ID = 10
A, VGS = 0V
VGS(th)
Gate-Threshold Voltage
0.8
1.9
3
VDS = VGS, ID = 1mA
IGSS
Gate-Body Leakage
±10
nA
VGS =
±15V, VDS = 0V
IDSS
Zero Gate Voltage Drain Current
1
A
VDS = 48V, VGS = 0V
1000
TC = 125
oC
ID(ON)
On-State Drain Current
3
75
210
mA
VDS = 10V, VGS = 4.5V
rDS(ON)
Drain-Source On-Resistance
3
4.8
5.3
4VGS = 4.5V, ID = 75mA
2.5
5
VGS = 10V, ID = 0.5A
4.4
9
TC = 125
oC
VDS(ON)
Drain-Source On-Voltage
3
0.36
0.4
V
4VGS = 4.5V, ID = 75mA
1.25
2.5
VGS = 10V, ID = 0.5A
2.2
4.5
TC = 125
oC4
gFS
Forward Transconductance
3
100
170
mS
VDS = 10V, ID = 0.2A
gOS
Common Source Output Conductance
3, 4
500
SVDS = 5V, ID = 50mA
DYNAMIC
Ciss
Input Capacitance
16
60
pF
VDS = 25V, VGS = 0V, f = 1MHz
Coss
Output Capacitance
4
11
25
Crss
Reverse Transfer Capacitance
2
5
SWITCHING
tON
Turn-On Time
7
10
nS
VDD = 15V, RL = 25
, ID = 0.5A
VGEN = 10V, RG = 25
(Switching time is essentially
independent of operating temperature)
tOFF
Turn-Off Time
7
10
NOTES: 1. TA = 25
oC unless otherwise specified.
2. For design aid only, not subject to production testing.
3. Pulse test; PW =
≤300S, duty cycle ≤3%.
4. This parameter not registered with JEDEC.
相關(guān)PDF資料
PDF描述
2N7008 150 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
2SA0719 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
2SA719 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
2SA0720 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
2SA720 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N-7000 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2N7000 AMO 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7000,126 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7000 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-92
2N7000/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 200 mAmps， 60 Volts
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