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參數(shù)資料
| 型號： | 2N7000 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | LEAD FREE, TO-92, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 232K |
| 代理商： | 2N7000 |
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
2N7000
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
at ID = 100 A, VGS = 0 V
V(BR)DSS
60
90
–
V
Gate-Body Leakage Current, Forward
at VGSF = 20 V, VDS = 0 V
IGSSF
––10
nA
Gate-Body Leakage Current, Reverse
at VGSR = –20 V, VDS = 0 V
IGSSR
–
–10
nA
Drain Cutoff Current
at VDS = 48 V, VGS = 0 V
IDSS
––1
A
Gate-Source Threshold Voltage
at VGS = VDS, ID = 1.0 mA
VGS(th)
0.8
1.5
3
V
Drain-Source ON Resistance
at VGS = 10 V, ID = 500 mA
RDS(ON)
–3.5
5.0
Capacitance
at VDS = 25 V, VGS = 0 V, f = 1 MHz
Input Capacitance
Output Capacitance
Feedback Capacitance
CiSS
COSS
CrSS
–
60
25
5
–
pF
Switching Times
at VGS = 10 V, VDS = 10 V, RD = 100
Turn-On Time
Turn-Off Time
ton
toff
–
10
–
ns
Thermal Resistance Junction to Ambient Air
RthJA
–
1501)
K/W
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N-7000 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2N7000 AMO | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000,126 | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-92 |
| 2N7000/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 200 mAmps， 60 Volts |
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