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參數(shù)資料
| 型號(hào)： | 2N7000 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | ROHS COMPLIANT, PLASTIC, 10D3, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | 2N7000 |
2N7000
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Drain-Source breakdown voltage – Drain-Source Durchbruchspannung
ID = 10 A
V(BR)DSS
60 V
Drain-Source leakage current – Drain-Source Leckstrom
G short
VDS = 48 V
VDS = 48 V, Tj = 125°C
IDSS
1 A
1 mA
Gate-Body leakage current – Gate-Substrat Leckstrom
VGS = ±15 V
±IGSS
10 nA
Gate-Threshold voltage – Gate-Source Schwellspannung
VGS = VDS, ID = 1 mA
VGS(th)
0.8 V
3 V
Drain-Source on-voltage – Drain-Source-Spannung
VGS = 10 V, ID = 500 mA
VGS = 4.5 V, ID = 75 mA
VDS(on)
2.5 V
0.45 V
Drain-Source on-state resistance – Drain-Source Einschaltwiderstand
VGS = 10 V, ID = 500 mA
VGS = 4.5 V, ID = 75 mA
RDS(on)
5 Ω
6 Ω
Forward Transconductance – bertragungssteilheit
VDS = 10 V, ID = 200 mA
gFS
100 mS
Input Capacitance – Eingangskapazitt
VDS = 25 V, f = 1 MHz
Ciss
60 pF
Output Capacitance – Ausgangskapazitt
VDS = 25 V, f = 1 MHz
Coss
25 pF
Reverse Transfer Capacitance – Rückwirkungskapazitt
VDS = 25 V, f = 1 MHz
Crss
5 pF
Turn-On Delay Time – Einschaltverzgerung
VDD= 15 V, RL= 30 Ω, ID= 0.5 A, VGS= 10 V, RG= 25 Ω
ton
10 ns
Turn-Off Delay Time – Ausschaltverzgerung
VDD= 15 V, RL= 30 Ω, ID= 0.5 A, VGS= 10 V, RG= 25 Ω
toff
10 ns
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht – umgebende Luft
RthA
< 357 K/W 1)
1
Device mounted on standard PCB material
Bauteil montiert auf Standard-Leiterplattenmaterial
2
http://www.diotec.com/
Diotec Semiconductor AG
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N-7000 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2N7000 AMO | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000,126 | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-92 |
| 2N7000/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 200 mAmps， 60 Volts |
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