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參數(shù)資料
| 型號： | 2N7000J18Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 746K |
| 代理商： | 2N7000J18Z |
Electrical Characteristics T
A = 25
oC unless otherwise noted
Symbol
Parameter
Conditions
Typ
e
Min
Typ
Max
Units
ON CHARACTERISTICS
Continued (Note 1)
I
D(ON)
On-State Drain Current
V
GS = 4.5 V,
V
DS = 10 V
2N7000
75
600
mA
V
GS = 10 V,
V
DS >
2 V
DS(on)
2N7002
500
2700
V
GS = 10 V,
V
DS >
2 V
DS(on)
NDS7002A
500
2700
g
FS
Forward Transconductance
V
DS = 10 V, ID = 200 mA
2N7000
100
320
mS
V
DS >
2 V
DS(on), ID = 200 mA
2N7002
80
320
V
DS >
2 V
DS(on), ID = 200 mA
NDS7002A
80
320
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS = 25 V,
V
GS = 0 V,
f = 1.0 MHz
All
20
50
pF
C
oss
Output Capacitance
All
11
25
pF
C
rss
Reverse Transfer Capacitance
All
4
5
pF
t
on
Turn-On Time
V
DD = 15 V, RL = 25 ,
I
D = 500 mA, VGS = 10 V,
R
GEN = 25
2N7000
10
ns
V
DD = 30 V, RL = 150 ,
I
D = 200 mA, VGS = 10 V,
R
GEN = 25
2N700
NDS7002A
20
t
off
Turn-Off Time
V
DD = 15 V, RL = 25 ,
I
D = 500 mA, VGS = 10 V,
R
GEN = 25
2N7000
10
ns
V
DD = 30 V, RL = 150 ,
I
D = 200 mA, VGS = 10 V,
R
GEN = 25
2N700
NDS7002
A
20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
2N7002
115
mA
NDS7002A
280
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
2N7002
0.8
A
NDS7002A
1.5
V
SD
Drain-Source Diode Forward
Voltage
V
GS = 0 V,
I
S = 115 mA (Note 1)
2N7002
0.88
1.5
V
GS = 0 V,
I
S = 400 mA (Note 1)
NDS7002
A
0.88
1.2
Note:
1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
2N7000.SAM Rev. A1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7000K | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:N Channel MOSFET ESD Protected 2000V |
| 2N7000KL | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET |
| 2N7000KL | 制造商:Vishay Intertechnologies 功能描述:MOSFET N TO-92 |
| 2N7000KL-TR1 | 功能描述:MOSFET 60V (DS) .47A .8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000KL-TR1-E3 | 功能描述:MOSFET 60V (DS) .47A .8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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