參數(shù)資料
型號: 2N7002/E8
廠商: GENERAL SEMICONDUCTOR INC
元件分類: 小信號晶體管
英文描述: 230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
文件頁數(shù): 5/5頁
文件大小: 104K
代理商: 2N7002/E8
2N7002
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 13 – Maximum Safe Operating Area
0.0001 0.001
0.01
0.1
1
10
100
I D
-
-Drain
Current
(A)
VDS -- Drain-Source Voltage (V)
Fig. 11 – Thermal Impedance
R
Θ
JA
(norm)
-
-Normalized
Thermal
Impedance
Pulse Duration (sec.)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
--50
--25
25
50
75
100
125
0
Fig. 10 – On-Resistance vs.
Junction Temperature
150
VGS = 10V
ID = 500mA
R
DS(ON)
On-Resistance
(Normalized)
TJ -- Junction Temperature (
°C)
Single Pulse
0.001
0.01
0.1
0
0.001
0.01
0.1
1
10
100
0.8
1.6
2.4
3.2
4.0
1
10
100
Fig. 12 – Power vs. Pulse Duration
Power
(W)
Pulse Duration (sec.)
Single Pulse
R
θJA = 417°C/W
TA = 25°C
VGS = 10V
Single Pulse
TA = 25
°C
RDS
(ON)
Limit
100
s
1ms
10ms
100ms
1s
DC
10s
D = 0.5
0.2
0.01
0.1
t1
t2
PDM
1. Duty Cycle, D = t1/t2
2. R
θJA (t) = RθJA(norm) *RθJA
3. R
θJA = 417°C/W
4. TJ - TA = PDM * R
θJA (t)
0.05
0.02
相關(guān)PDF資料
PDF描述
2N7002/E9 230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7002CSM-JQR 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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