參數(shù)資料
型號: 2N7002/E9
廠商: GENERAL SEMICONDUCTOR INC
元件分類: 小信號晶體管
英文描述: 230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
文件頁數(shù): 1/5頁
文件大小: 104K
代理商: 2N7002/E9
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source-Voltage
VGS
±20
V
Continuous Drain Current
TA = 25°C
ID
230
mA
TJ = 150°C
TA = 70°C
180
Pulsed Drain Current(1)
IDM
1300
mA
Maximum Power Dissipation
TA = 25°C
300
TA = 70°C
PD
192
mW
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to +150
°C
Maximum Junction-to-Ambient Thermal Resistance
R
θJA
417
°C/W
Note:
(1) Pulse test, pulse width
≤ 300s, duty cycle ≤ 2%
2N7002
N-Channel Enhancement-Mode MOSFET
VDS 60V RDS(ON) 3.0
ID 230mA
3/8/01
Features
Advanced Trench Process Technology
High density cell design for ultra-low on-resistance
High input impedance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No secondary breakdown
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: S72
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
TRENCH
GEN
FET
TM
.016 (0.4)
.056
(
1
.43
)
.037(0.95) .037(0.95)
ma
x
..004
(
0.1
)
.122 (3.1)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007
(
0
.17
5)
.0
45
(
1
.15)
.110 (2.8)
.052
(
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37
(
0
.95)
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Pin Configuration
1. Gate
2. Source
3. Drain
Mounting Pad Layout
相關(guān)PDF資料
PDF描述
2N7002CSM-JQR 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002CSM-JQR-A 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002CSM-JQR-B 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002CSM-QR-B 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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