參數(shù)資料
型號(hào): 2N7002BKM
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 60 V, 450 mA N-channel Trench MOSFET
中文描述: 450 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN
文件頁數(shù): 8/16頁
文件大?。?/td> 329K
代理商: 2N7002BKM
2N7002BKM
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 25 October 2010
8 of 16
NXP Semiconductors
2N7002BKM
60 V, 450 mA N-channel Trench MOSFET
V
DS
> I
D
×
R
DSon
(1) T
amb
= 25
°
C
(2) T
amb
= 150
°
C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
I
D
= 0.25 mA; V
DS
= V
GS
(1) maximum values
(2) typical values
(3) minimum values
f = 1 MHz; V
GS
= 0 V
(1) C
iss
(2) C
oss
(3) C
rss
Fig 13. Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
Fig 12. Gate-source threshold voltage as a function of
ambient temperature
V
GS
(V)
0.0
5.0
4.0
2.0
3.0
1.0
017aaa043
0.4
0.6
0.2
0.8
1.0
I
D
(A)
0.0
(1)
(2)
T
amb
(
°
C)
60
180
120
0
60
017aaa044
1.2
0.6
1.8
2.4
a
0.0
a
R
R
DSon 25
°
C
)
-----------------------------
=
T
amb
(
°
C)
60
180
120
0
60
017aaa045
1.0
2.0
3.0
V
GS(th)
(V)
0.0
(2)
(1)
(3)
017aaa046
V
DS
(V)
10
1
10
2
10
1
10
10
2
C
(pF)
1
(2)
(1)
(3)
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