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參數(shù)資料
| 型號： | 2N7002E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 99K |
| 代理商： | 2N7002E |
Semiconductor Components Industries, LLC, 2007
April, 2007
Rev. 1
1
Publication Order Number:
2N7002E/D
2N7002E
Small Signal MOSFET
60 V, 310 mA, Single, N
Channel, SOT
23
Features
Low R
DS(on)
Small Footprint Surface Mount Package
Trench Technology
This is a Pb
Free Device
Applications
Low Side Load Switch
Level Shift Circuits
DC
DC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Rating
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
60
V
Gate
to
Source Voltage
V
GS
±
20
V
Drain Current (Note 1)
Steady State
T
A
= 25
°
C
T
A
= 85
°
C
t < 5 s
T
A
= 25
°
C
T
A
= 85
°
C
I
D
260
190
310
220
mA
Power Dissipation (Note 1)
Steady State
t < 5 s
P
D
300
420
mW
Pulsed Drain Current (t
p
= 10 s)
I
DM
1.2
A
Operating Junction and Storage
Temperature Range
T
J
, T
STG
55 to
+150
°
C
Source Current (Body Diode)
I
S
300
mA
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Junction
to
Ambient
Steady State
(Note 1)
R
JA
417
°
C/W
Junction
to
Ambient
t
≤
5 s (Note 1)
R
JA
300
1. Surface
mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
Device
Package
Shipping
ORDERING INFORMATION
2N7002ET1G
3000/Tape & Reel
Simplified Schematic
SOT
23
CASE 318
STYLE 21
703 W
703
W
= Device Code
= Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
3
2
1
Gate
Drain
2
1
3
Source
http://onsemi.com
SOT
23
(Pb
Free)
60 V
3.0 @ 4.5 V
R
DS(on)
MAX
310 mA
I
D
MAX
(Note 1)
V
(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2.5 @ 10 V
(Top View)
3
1
2
N
Channel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N7002LT1 | Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 |
| 2N7002LT1G | Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 |
| 2N7002LT3 | Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 |
| 2N7002LT3G | Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 |
| 2N7002L | Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002E,215 | 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002E_10 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002E_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 60 V, 310 mA, Single, N.Channel, SOT.23 |
| 2N7002E215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 385MA 3-SOT-23 |
| 2N7002-E3 | 功能描述:MOSFET 60V 0.115A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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