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參數(shù)資料
| 型號： | 2N7002E-13 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 72K |
| 代理商： | 2N7002E-13 |
DS30376 Rev. 4 - 2
3 of 3
2N7002E
www.diodes.com
0
0.2
0.4
0.6
0.8
1.0
01
2
3
4
5
I
,DRAIN-SOURCE
CURRENT
(A)
D
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 On-Region Characteristics
V= 10V
GS
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.1V
5.5V
10V
5.0V
2.1V
0
V , GATE TO SOURCE VOLTAGE (V)
GS
Fig. 2 Drain Current vs. Gate-Source Voltage
0.4
0.8
1.2
1.6
2.0
01
2
34
56
7
I
,DRAIN
CURRENT
(A)
D
T = -55°C
A
T = 125°C
A
T = 25°C
A
0
1
2
3
4
5
02
4
6
8
10
R
-
DRAIN-SOURCE-ON-RESIST
ANCE
(W
)
DS(ON),
V
- GATE TO SOURCE VOLTAGE (V)
GS
Fig. 3 On Resistance vs.
Gate to Source Voltage
I = 75mA
D
I = 250mA
D
T
C
U
D
O
R
P
W
E
N
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
R
DRAIN-SOURCE-ON-RESIST
ANCE
(W
)
DS(ON),
I , DRAIN CURRENT (A)
D
Fig. 4 On Resistance vs.
Drain Current
V
= 4.5V
GS
V
= 10V
GS
0
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 On-Resistance vs. Junction Temperature
V = 4.5V @ 200mA
GS
1
2
3
4
5
-75 -50 -25
025
50
75 100 125 150
R
,DRAIN-SOURCE
DS(ON)
ON-RESIST
ANCE
(
)
W
V = 10V @ 250mA
GS
0
50
100
25
50
75
100 125
150 175 200
P
,POWER
D
ISSIP
A
TION
(mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 6, Max Power Dissipation vs
Ambient Temperature
150
200
250
300
350
0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002E215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 385MA 3-SOT-23 |
| 2N7002-E3 | 功能描述:MOSFET 60V 0.115A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| 2N7002E-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002E-7-F | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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