參數(shù)資料
型號： 2N7002E-T1-GE3
廠商： VISHAY SILICONIX
元件分類： 小信號晶體管
英文描述： 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝： HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
文件頁數(shù)： 1/8頁
文件大小： 174K
代理商： 2N7002E-T1-GE3
Vishay Siliconix
2N7002E
Document Number: 70860
S11-0183-Rev. F, 07-Feb-11
www.vishay.com
1
N-Channel 60 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Low On-Resistance: 3
Low Threshold: 2 V (typ.)
Low Input Capacitance: 25 pF
Fast Switching Speed: 7.5 ns
Low Input and Output Leakage
Compliant to RoHS Directive 2002/95/EC
BENEFITS
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
APPLICATIONS
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
PRODUCT SUMMARY
VDS (V)
RDS(on) ()ID (mA)
60
3 at VGS = 10 V
240
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Marking Code: 7E
Ordering Information: 2N7002E-T1-E3 (Lead (Pb)-free)
2N7002E-T1-GE3 (Lead (Pb)-free and Halogen-free)
Notes:
a. Pulse width limited by maximum junction temperature.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
ID
240
mA
TA = 70 °C
190
Pulsed Drain Currenta
IDM
1300
Power Dissipation
TA = 25 °C
PD
0.35
W
TA = 70 °C
0.22
Thermal Resistance, Junction-to-Ambient
RthJA
357
°C/W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
相關(guān)PDF資料
PDF描述
2N7002FT/R 475 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7002G-AL6-R 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002G-AL3-R 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002KTB 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002KW 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N7002ET3G 功能描述:MOSFET SMALL SIGNAL MOSFET 60V 310mA SINGL CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002F 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.475A SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:475mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes
2N7002F,215 功能描述:MOSFET N-CH TRNCH 60V .475A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7002F215 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 475MA 3-SOT-23
2N7002FN3 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET
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