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參數(shù)資料
| 型號： | 2N7002FN3T/R |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, DFN-3 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 2N7002FN3T/R |
PAGE . 1
September 03.2010-REV.00
2N7002FN3
60V N-CHANNEL ENHANCEMENT MODE MOSFET
FEATURES
R
DS(ON), VGS@10V,IDS@500mA=5Ω
R
DS(ON), VGS@4.5V,IDS@50mA=7.5Ω
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Specially Designed for Battery Operated Systems, Solid-State
Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: DFN 3L, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Marking: AH
Maximum Ratings and Thermal Characteristics (T
A=25
OC unless otherwise noted )
Note 1 : Maximum DC current limited by the package
2 : Surface mounted on FR4 board,t<10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DSEIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
0.042(1.05)
0.037(0.95)
0.013(0.32)
0.008(0.22)
0.014(0.36)
0.013(0.32)
0.008(0.22)
0.002(0.05) MAX.
0.026(0.65)
0.021(0.55)
0.0
(0.55)
0.047(0.45)
22
0.0
(0.55)
0.047(0.45)
22
0.0
(0.20)
0.004(0.10)
08
0.0
(0.20)
14
0.0
(0.20)
0.004(0.10)
08
DFN 3L
Unit : inch(mm)
PARAMETER
SYMBOL
LIMIT
UNITS
Drain-Source Voltage
VDS
60
V
Gats-Source Voltage
VGS
+20
V
Continous Drain Current
I D
115
mA
Pulsed Drain Current (1)
I DM
800
mA
Maximum Power Dissipation
PD
150
mW
Junction-to Ambient Thermal Resistance (PCB mounted)2
R
θJA
883
oC/W
O per at i ng Junc t i on and S t or age Te m p er atur e Ra ng e
TJ,TSTG
-55 to +150
oC
1
2
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002FTR | 制造商:NXP Semiconductors 功能描述: |
| 2N7002-G | 功能描述:MOSFET 60V 7.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002-G_12 | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:MOSFET |
| 2N7002G-AE2-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:0.3A, 60V N-CHANNEL POWER MOSFET |
| 2N7002H-13 | 功能描述:MOSFET N-CH 60V 0.17A SOT23 制造商:diodes incorporated 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:60V 電流 - 連續(xù)漏極（Id）（25°C 時）:170mA（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:7.5 歐姆 @ 50mA，5V 不同 Id 時的 Vgs（th）（最大值）:3V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:0.35nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:26pF @ 25V 功率 - 最大值:370mW 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商器件封裝:SOT-23 標(biāo)準(zhǔn)包裝:10,000 |
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