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參數(shù)資料
| 型號： | 2N7002K-T1-GE3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | HALOGEN FREE AND LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 210K |
| 代理商： | 2N7002K-T1-GE3 |
Vishay Siliconix
2N7002K
Document Number: 71333
S09-0857-Rev. E, 18-May-09
www.vishay.com
5
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71333.
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3
10-2
1
10
10-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Nor
maliz
ed
E
ff
ectiv
e
T
ransient
Ther
mal
Impedance
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002KT3G | 功能描述:MOSFET SMALL SIGNAL MOSFET 60V 380mA SINGL CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002KTB | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 2N7002KTB6 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 2N7002K-TP | 功能描述:MOSFET 350mW, 60V, 340mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002KU | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:N Channel MOSFET |
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