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參數(shù)資料
| 型號： | 2N7002K |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | TO-236, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 112K |
| 代理商： | 2N7002K |
Document Number: 71333
S-72195-Rev. B, 22-Oct-07
www.vishay.com
3
Vishay Siliconix
2N7002K
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0.0
0.2
0.4
0.6
0.8
1.0
012
345
VDS – Drain-to-Source Voltage (V)
–
Dr
ain
Current
(A)
I
D
VGS = 10 V
3 V
5 V
4 V
6 V
7 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
200
400
600
800
1000
ID – Drain Current (mA)
VGS = 4.5 V
VGS = 10 V
–
On-Resistance
(
Ω
)
r DS(on)
0
1
2
3
4
5
6
7
0.0
0.1
0.2
0.3
0.4
0.5
0.6
VDS = 10 V
ID = 250 mA
–
Gate-to-Source
V
oltage
(V)
Qg – Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
300
600
900
1200
0123456
VGS – Gate-to-Source Voltage (V)
–
Dr
ain
Current
(mA)
I
D
TJ = - 55 °C
125 °C
25 °C
0
8
16
24
32
40
0
5
10
15
20
25
VDS – Drain-to-Source Voltage (V)
C
–
Capacitance
(pF)
Crss
Coss
Ciss
VGS = 0 V
0.0
0.4
0.8
1.2
1.6
2.0
- 50
- 25
0
25
50
75
100
125
150
TJ – Junction Temperature (°C)
VGS = 10 V at 500 mA
VGS = 4.5 V
at 200 mA
(Nor
maliz
ed)
–
On-Resistance
r DS(on)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002K / T1 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR MOSFET 制造商:Vishay Siliconix 功能描述:TRANSISTOR, MOSFET |
| 2N7002K _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002K,215 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002K | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.34A SOT23 |
| 2N7002K_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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