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參數(shù)資料
| 型號(hào)： | 2N7002K |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | TO-236, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 112K |
| 代理商： | 2N7002K |
www.vishay.com
4
Document Number: 71333
S-72195-Rev. B, 22-Oct-07
Vishay Siliconix
2N7002K
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage Variance Over Temperature
1.2
1.5
1
100
1000
0.00
0.3
0.6
0.9
TJ = 25 °C
TJ = 125 °C
VSD – Source-to-Drain Voltage (V)
–
Source
Current
(A)
I
S
10
TJ = - 55 °C
VGS = 0 V
V
a
riance
(V)
V
GS(th)
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50
- 25
0
25
50
75
100
125
150
ID = 250 A
TJ – Junction Temperature (
°C)
On-Resistance vs. Gate-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
1
2
3
4
5
02468
10
VGS – Gate-to-Source Voltage (V)
ID = 500 mA
ID = 200 mA
–
On-Resistance
(
Ω
)
r DS(on)
0.01
0
1
2.5
3
100
600
0.1
P
o
w
er
(W)
Time (s)
1.5
2
0.5
1
10
TA = 25 °C
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
10-3
10-2
1
10
600
10-1
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Nor
maliz
ed
Ef
fectiv
e
T
ransient
Ther
mal
Impedance
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 350 °C/W
3. T JM – TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002K / T1 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR MOSFET 制造商:Vishay Siliconix 功能描述:TRANSISTOR, MOSFET |
| 2N7002K _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002K,215 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002K | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.34A SOT23 |
| 2N7002K_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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