參數(shù)資料
型號: 2N7002KFN3
元件分類: 小信號晶體管
英文描述: 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: ROHS COMPLIANT, DFN-3
文件頁數(shù): 3/5頁
文件大?。?/td> 130K
代理商: 2N7002KFN3
PAGE . 3
September 03.2010-REV.00
2N7002KFN3
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
FIG.2- Transfer Characteristic
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
FIG.5- On Resistance vs Junction Temperature
0
0.2
0.4
0.6
0.8
1
1.2
01
23
45
VDS - Drain-to-Source Voltage (V)
I D
-
D
ra
in
-to
-S
o
u
rc
e
C
u
rr
e
n
t
(A
)
VGS= 6.0~10V
5.0V
4.0V
3.0V
4.0V
3.0V
5.0V
0
0.2
0.4
0.6
0.8
1
1.2
012
3456
VGS - Gate-to-Source Voltage (V)
ID
-
D
ra
in
S
o
u
rce
C
u
rr
en
t
(A
)
V =10V
DS
V =10V
DS
V =10V
DS
T =25
J
T =25
J
T =25
J
0
1
2
3
4
5
234
5678
9
10
VGS - Gate-to-Source Voltage (V)
ID =200m A
ID =500m A
R
-On-Resistance
(
)
DS(ON)
W
I =200mA
D
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
ID -Drain Current(A)
VGS =4.5V
VGS=10V
R
-On-Resistance
(
)
DS(ON)
W
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (
oC)
R
DS
(O
N)
-
O
n-
R
e
s
is
tanc
e(
N
o
rm
al
iz
ed)
VGS =10V
ID =500mA
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