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參數(shù)資料
| 型號： | 2N7002KW |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 156K |
| 代理商： | 2N7002KW |
PAGE . 4
May 21.2010-REV.01
2N7002KW
Fig.6 - Gate Charge Waveform
Fig.8 - Threshold Voltage vs Temperature
Fig.7 - Gate Charge
Fig.9 - Breakdown Voltage vs Junction Temperature
Fig.10 - Source-Drain Diode Forward Voltage
Qgd
Qgs
Qg
Qsw
Vgs(th)
Vgs
Qg
Qg(th)
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
Qg -GateCharge(nC)
V
GS
-
G
a
te
-to
-S
o
u
rc
e
V
o
lta
g
e
(V
)
V =10V
I =250mA
DS
D
72
74
76
78
80
82
84
86
88
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (
oC)
BV
DS
S
-
B
re
a
k
dow
n
V
ol
ta
ge
(V
)
ID = 250uA
0.7
0.8
0.9
1
1.1
1.2
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (
oC)
V
th
-
G
-S
Thre
s
hold
V
olt
a
ge
(N
O
R
MALIZE
D)
ID =250
mA
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
IS
-
S
o
u
rce
C
u
rren
t
(A
)
V =0V
GS
T =125
J
℃
25
℃
-55
℃
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| 2N7002BK | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7002KW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002KW_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002KW_10 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 2N7002KW-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-323 T/R |
| 2N7002L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 |
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