參數(shù)資料
型號: 2N7008-G
廠商: SUPERTEX INC
元件分類: 小信號晶體管
英文描述: N-Channel Enhancement-Mode Vertical DMOS FETs
中文描述: 230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: GREEN PACKAGE-3
文件頁數(shù): 2/3頁
文件大?。?/td> 403K
代理商: 2N7008-G
2
2N7008
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
Symbol
Parameter
DRAIN-to-SOURCE breakdown
voltage
V
GS(th)
I
GSS
Min
Typ
Max
Units
Conditions
BV
DSS
60
-
-
V
V
GS
= 0V, I
D
= -10μA
GATE threshold voltage
GATE body leakage current
1.0
-
-
-
-
-
2.5
100
1.0
V
nA
μA
V
GS
= V
DS
, I
D
= 250μA
V
GS
= ±30V, V
DS
= 0V
V
GS
= 0V, V
DS
= 50V
V
GS
= 0V, V
DS
= 50V,
T
A
= 125
O
C
V
GS
= 10V, V
DS
≥ 2.0V
DS(ON)
V
GS
= 5.0V, I
D
= 50mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 10V, I
D
= 0.2A
I
DSS
Zero GATE voltage drain current
-
-
500
μA
I
D(ON)
ON-state DRAIN current
500
-
-
80
-
-
-
-
-
-
-
mA
R
DS(ON)
Static DRAIN-to-SOURCE
ON-state resistance
7.5
7.5
-
50
Ω
G
FS
C
ISS
Forward transconductance
Input capacitance
Common SOURCE output
capacitance
Reverse transfer capacitance
Turn-ON time
Turn-OFF time
Diode forward voltage drop
mmho
pF
V
= 0V, V
DS
= 25V,
f = 1.0MHz
C
OSS
-
-
25
C
RSS
t
(ON)
t
(OFF)
V
SD
-
-
-
-
-
-
-
-
5
20
20
1.5
ns
V
DD
= 30V, I
D
= 200mA,
R
GEN
= 25
V
GS
= 0V, I
SD
= 150mA
V
Notes:
1.All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300μs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
Thermal Characteristics
Device
Package
I
(continuous)
*
(mA)
230
I
(pulsed)
(A)
1.3
Power Dissipation
@T
C
= 25
O
C
(W)
1.0
θ
(
O
C/W)
θ
(
O
C/W)
I
(mA)
*
I
(A)
2N7008
Notes:
* I
D
(continuous) is limited by max rated T
j
.
TO-92
170
125
230
1.3
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
GEN
0V
0V
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