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參數(shù)資料
| 型號(hào)： | 2N7224-QR-EB |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | 34 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 23K |
| 代理商： | 2N7224-QR-EB |
2N7224
IRFM150
LAB
SEME
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website http://www.semelab.co.uk
2/99
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 21A
VGS = 10V
ID = 34A
VDS = VGS
ID = 250mA
VDS 15V
IDS = 21A
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 34A
VDS = 0.5BVDS
ID =34A
VDS = 0.5BVDS
VDD = 50V
ID = 34A
RG = 2.35W
IS = 34A
TJ = 25°C
VGS = 0
IF = 34A
TJ = 25°C
di / dt 100A/ms VDD 50V
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
100
0.13
0.070
0.081
2
4
9
25
250
100
–100
3700
1100
200
50
125
8
22
15
65
35
190
170
130
34
136
1.8
500
2.9
Negligible
8.7
V
V/ °C
W
V
S(
W
mA
nA
pF
nC
ns
A
V
ns
mC
nH
BVDSS
DBVDSS
DTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
LD
LS
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
300ms, d 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance (from centre of drain pad to die)
Internal Source Inductance (from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS
(
W)
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| 2N7225UPBF | 27.4 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7224U | 制造商:Microsemi Corporation 功能描述:2N7224U - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 100V SMD1 |
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