參數(shù)資料
型號(hào): 2N7225
廠商: SEMELAB LTD
元件分類(lèi): JFETs
英文描述: 27.4 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
封裝: HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 112K
代理商: 2N7225
N-CHANNEL POWER MOSFET
2N7225 / IRFM250
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number 3351
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Issue 3
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0
ID = 1.0mA
200
V
J
T
DSS
BV
Temperature Coefficent of
Breakdown Voltage
Reference
to 25°C
ID = 1.0mA
0.28
V/°C
VGS = 10V
ID = 17A
0.100
RDS(on)
(3)
Static Drain-Source
On-State Resistance
VGS = 10V
ID = 27.4A
0.105
VDS = VGS
ID = 250A
2
4
TJ = 125°C
1.0
VGS(th)
Gate Threshold Voltage
TJ = -55°C
5
V
gfs
(3)
Forward Transconductance
VDS ≥ 15V
I DS = 17A
9
S()
VGS = 0
VDS = 0.8BVDSS
25
IDSS
Zero Gate Voltage
Drain Current
TJ = 125°C
250
A
VGS = 20V
100
IGSS
Forward Gate-Source
Leakage
VDS = 0V
TJ = 125°C
200
VGS = -20V
-100
IGSS
Reverse Gate-Source
Leakage
VDS = 0V
TJ = 125°C
-200
nA
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VGS = 0
3500
Coss
Output Capacitance
VDS = 25V
700
Crss
Reverse Transfer
Capacitance
f = 1.0MHz
110
pF
Qg
Total Gate Charge
VGS = 10V
85
Qgs
Gate-Source Charge
ID = 27.4A
15
Qgd
Gate-Drain Charge
VDS = 0.5BVDSS
45
nC
td(on)
Turn-On Delay Time
35
tr
Rise Time
190
td(off)
Turn-Off Delay Time
170
tf
Fall Time
VDD = 100V
ID = 27.4A
VGS = 10V
RG = 2.35
130
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
27.4
ISM
(1)
Pulse Source Current
110
A
IS = 27.4A
TJ = 25°C
VSD
(3)
Diode Forward Voltage
VGS = 0
1.9
V
ton
Forward Turn-On Time
Negligible
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