參數(shù)資料
型號: 2PB710AS
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: PNP general purpose transistor
中文描述: 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
封裝: PLASTIC, SC-59, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 42K
代理商: 2PB710AS
1999 May 31
3
Philips Semiconductors
Product specification
PNP general purpose transistor
2PB710A
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
10
5
10
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
60 V
I
E
= 0; V
CB
=
60 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
150 mA; V
CE
=
10 V; note 1
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
2PB710AQ
2PB710AR
2PB710AS
DC current gain
collector-emitter saturation voltage I
C
=
300 mA; I
B
=
30 mA; note 1
base-emitter saturation voltage
collector capacitance
transition frequency
2PB710AQ
2PB710AR
2PB710AS
85
120
170
40
170
240
340
600
1.5
15
I
C
=
500 mA; V
CE
=
10 V; note 1
V
CEsat
V
BEsat
C
c
f
T
mV
V
pF
I
C
=
300 mA; I
B
=
30 mA; note 1
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
=
50 mA; V
CE
=
10 V;
f = 100 MHz; note 1
100
120
140
MHz
MHz
MHz
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2PB710ASL,235 功能描述:兩極晶體管 - BJT Trans GP BJT PNP 50V 0.5A 3-Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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